DC COMPONENTS CO., LTD.
R
2SC945
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
...
DC COMPONENTS CO., LTD.
R
2SC945
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use in driver stage of AF amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG
o
C) Rating 60 50 5 100 50 250 +150 -55 to +150 Unit V V V mA mA mW
o o
Symbol
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle
Min 60 50 5 50 135 150 2%
Typ 0.1 -
Max 0.1 0.1 0.3 600 600 4
Unit V V V µA µA V MHz pF
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IB=0 IC=100mA, IB=10mA IC=0.1mA, VCE=6V IC=1mA, VCE=6V IC=10mA, VCE=6V, f=100MHz VCB=10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Cur...