2N3720

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 APPLICATIONS: 2N3720 High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 VALUE 60 60 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175 ABSOLUTE MAXIMUM MAXIMUM RATINGS: SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD* PD* θ CHARACTERISTIC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current ...