Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SB1322A
FEATURES Power dissipation PCM: 1 W (...
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated
Transistors
2SB1322A
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
TRANSISTOR (
PNP) TO-92
1. EMITTER
2. COLLECTOR
Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-10µA, IE=0 Ic=-2mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-10V, IC=-0.5A VCE=-5V, IC=-1A IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz
-60 -50 -5 -0.1 -0.1 85 50 -0.4 -1.2 200
30
µA µA
340
V V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking Q 85-170 R 120-240 S 170-340
Free Datasheet http://www.datasheet4u.com/
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