2SB139100MA
2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø 2SB139100MA is a schottky barrier diode chip...
2SB139100MA
2SB139100MA LOW IR
SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø Ø 2SB139100MA is a
schottky barrier diode chips
Lb
Due to special
schottky barrier structure, the
chips
have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1390µm X 1390µm; Chip Thickness: 280±20µm; Product Name 2SB139100MAYY Specification For Axial leads package Chip Topography and Dimensions La: Chip Size: 1.390mm; Lb: Pad Size: 1.295mm;
ORDERING SPECIFICATIONS
Ø
ABSOLUTE MAXIMUM RATINGS
Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge
[email protected] Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 3 80 150 -40~150 Unit V A A °C °C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.5mA IF=3A VR=100V Min. 100 --Max. -0.85 0.5 Unit V V mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.04.27 Page 1 of 1
Free Datasheet http://www.datasheet4u.com/
La
fabricated in silicon epitaxial planar technology;
...