Document
SMD Type
Transistors
PNP/NPN Epitaxial Planar Silicon Transistors 2SB1394
Features
Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.
Electrical Connection
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm X0.8mm)
2
Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg
Rating -40 -30 -6 -3 -5 1.5 150 -55 to +150
Unit V V V A A W
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1
Free Datasheet http://www.datasheet4u.com/
SMD Type
2SB1394
Electrical Characteristics Ta = 25
Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter on state voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Collector-to-emitter breakdown voltage Diode forward voltage Base-emitter resistance Base resistance Symbol ICBO hFE fT Cob Testconditons VCB = -30V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -2A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz
Transistors
Min
Typ
Max -1
Unit ìA
70 50 100 55 -0.18 -0.7 -40 -40 -30 -1.5 0.8 60 90 120 V KÙ Ù -1.5 -0.4 -4 MHz pF V V V V
VCE(sat) IC = -1A , IB = -50mA VBE(ON) VCE = -2V , IC = -1A V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO1 IC = -10ìA , RBE = V(BR)CEO2 IC = -10mA , RBE = VF RBE R1 IF=0.5A
Marking
Marking BN
2
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Free Datasheet http://www.datasheet4u.com/
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