Document
2SB1424
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
D D1 A
PNP Silicon Medium Power Transistor
E1
b1
1.BASE
SOT-89
b
L
2.COLLECTOR 3. EMITTER
E
e e1
C
FEATURES
Symbol
Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min
Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043
Power dissipation : 600 mW Temp.=25 PCM Collector current : -3 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
A b b1 c D D1 E E1 e e1 L
0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test
unless otherwise specified
conditions MIN TYP MAX UNIT V V V
Ic=-50 A,IE=0 Ic=-1mA,IB=0 IE=-50 A,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-100mA IC=-2A,IB=-100mA VCE=-2V,IC=-500mA,f=100MHz VCB=-10V,IE=0,f=1MHz
-20 -20 -6 -0.1 -0.1 120 390 -0.5 240 35
A A
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 AEQ R 180-390 AER
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Free Datasheet http://www.datasheet4u.com/
01-Jun-2002 Rev. A
Page 1 of 2
2SB1424
Elektronische Bauelemente
PNP Silicon Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Free Datasheet http://www.datasheet4u.com/
01-Jun-2002 Rev. A
Page 2 of 2
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