2SB1414

Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −150 −150 −5 −1 −1.5 1.5 150 −55 to +150 Unit V V V A A W °C °C 2.5±0.2 0.8 C 1 2 3 0.5±0.1 2.05±0.2 0.4±0.1 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emiter-base voltage (Collector open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Symbol VCEO VEBO hFE1 *2 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = −100 µA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −150 mA VCE = −5 V, IC = −500 mA IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA VCB = −10 V, ...