2SB1527

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB1527 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Low saturation voltage. Contains a diode between collector and emitter. Contains a bias resistor between base and emitter. Large current capacity. Compact package making it easy to realize highdensity, +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -15 -5 -0.8 -2 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Diode forward voltage Base-emitter resistance Symbol ICBO hFE fT Cob Testconditons VCB = -15V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz 70 250 30 -0.2 -.095 -20 -15 -1.5 1 -0.4 -1.3 MHz pF V V V V V KÙ Min Typ Max -1 Unit ìA VCE(sat) IC = -500mA , IB = -10mA VBE(sat) IC = -500mA , IB = -10mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = VF RBE IF=-0.5A Marking Marking NS +0.1 0.38-0.1 ...