2SB1628

DATA SHEET SILICON TRANSISTOR 2SB1628 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1628 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. PACKAGE DRAWING (UNIT: mm) FEATURES High current capacitance Low collector saturation voltage QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode connection 1: Emitter 2: Collector (fin) 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Symbol VCBO VCEO VEBO IC(DC) IC(pulse) PW ≤ 10 ms Duty cycle ≤ 50 % Conditions Ratings −20 −16 −6.0 −3.0 −5.0 −0.2 PW ≤ 10 ms Duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board used −0.4 Unit V V V A A Base current (DC) Base current (pulse) IB(DC) IB(pulse) A A Total power dissipation Junction temperature Storage temperature PT Tj Tstg 2.0 150 −55 to +150 W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16148EJ1V0DS0...