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2SB1649

Sanken

Silicon PNP Transistor

(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –...


Sanken

2SB1649

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(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –15 –1 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1649 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz Ratings –100max –100max –150min 5000min∗ –2.5max –3.0max 45typ 320typ V V pF 16.2 B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 µA V 9.5±0.2 µA 23.0±0.3 a b MHz 1.75 2.15 1.05 5.45±0.1 1.5 4.4 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –10 IB2 (mA) 10 ton (µs) 0.7typ tstg (µs) 1.6typ tf (µs) 1.1typ 5.45±0.1 1.5 0.65 +0.2 -0.1 3.35 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) –15 –2 m A –1.5mA V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –3 I C – V BE Temperature Characteristics (Typical) –15 (V CE =–4V) –50mA –10mA –3mA –1 .0m A Collector Current I C (A) –0.8 mA Collector Current I C (A) –10 –0. 5m A –2 –10 p)...




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