Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
2SC1623
FEATURES Power dissipati...
Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulate
Transistors
SOT-23-3L
2SC1623
FEATURES Power dissipation
TRANSISTOR (
NPN)
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
PCM: 200
mW (Tamb=25℃)
0. 025 0. 95¡ À
2. 80¡ À 0. 05 1. 60¡ À0. 05
Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA
60 50 5 0.1 0.1 90 600 0.3 1 250
0. 35
2. 92¡ À0. 05
1. 9
µA µA
V V MHz
fT
CLASSIFICATION OF hFE(1) Rank Range Marking L4 90-180 L4 L5 135-270 L5 L6 200-400 L6 L7 300-600 L7
Free Datasheet http://www.datasheet4u.com/
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