2SC1623F
Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor
DESCRIPTION
The 2SC1623F is designed fo...
2SC1623F
Elektronische Bauelemente 150 mA, 60 V
NPN Epitaxial Planar
Transistor
DESCRIPTION
The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.
PACKAGE DIMENSIONS
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC Pd TJ, TSTG
Ratings
60 50 5 150 250 +150, -55 ~ +150
Unit
V V V mA mW ℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 *hFE2 *hFE3 fT Cob
Min.
60 50 5 90 25 80 80 -
Typ.
-
Max.
100 100 250 1.0 600 3.5
Unit
V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V
Test Conditions
IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=1V, IC=10mA
MHz pF
VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2%
CLASSIFICATION OF hFE1
Rank Range
P 90 - 180 Y 135 - 270 G 200 - 400 B 300 - 600
01-June-2002 Rev. A
Page 1 of 2
Free Datasheet http://www.datasheet4u.com/
2SC1623F
Elektronische Bauelemente 150 mA, 60 V
NPN Epitaxial Planar
Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. A
Page 2 of 2
Free Datasheet http://www.datasheet4u.com/
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