2SC1654

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA) z High voltage. Production specification 2SC1654 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC1654 Marking N5/N6/N7 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 180 160 5 50 150 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC096 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VCE(sat) fT Cob Test conditions IC=100μA,IE=0 IC=1mA,IB=0 B Production specification 2SC1654 MIN 180 160 5 0.1 0.1 90 70 0.3 1 120 2.3 V V MHz pF 400 TYP MAX UNIT V V V μA μA IE=100μA,IC=0 VCB=130V,IE=0 VEB=5V,IC=0 VCE=3V,IC=15mA VCE=3V,IC=5mA IC=50mA, IB=5mA B IC=50mA, IB=5mA B VCE=10V, ...