2SC1815 TRANSISTOR Datasheet

2SC1815 Datasheet PDF, Equivalent


Part Number

2SC1815

Description

NPN EPITAXIAL PLANAR TRANSISTOR

Manufacture

Dc Components

Total Page 1 Pages
Datasheet
Download 2SC1815 Datasheet


2SC1815
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC1815
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
general purpose amplification.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating
60
50
5
150
50
400
+150
-55 to +150
Unit
V
V
V
mA
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 60
Collector-Emitter Breakdown Voltage BVCEO 50
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
DC Current Gain(1)
hFE1
hFE2
70
25
Transition Frequency
fT 80
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
0.25
1
700
-
-
3.5
Classification of hFE1
Rank
O
Y
Range
70~140
120~240
GR
200~400
BL
350~700
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=2mA, VCE=6V
IC=150mA, VCE=6V
IC=1mA, VCE=10V
VCB=10V, f=1MHz, IE=0


Features DC COMPONENTS CO., LTD. R 2SC1815 DISC RETE SEMICONDUCTORS TECHNICAL SPECIFIC ATIONS OF NPN EPITAXIAL PLANAR TRANSIST OR Description Designed for use in dri ver stage of AF amplifier general purpo se amplification. TO-92 .190(4.83) .17 0(4.33) .190(4.83) .170(4.33) 2 Typ 2 T yp .500 Min (12.70) .022(0.56) .014(0.3 6) .100 Typ (2.54) .148(3.76) .132(3.36 ) .022(0.56) .014(0.36) o o Pinning 1 = Emitter 2 = Collector 3 = Base Absol ute Maximum Ratings(TA=25oC) Characteri stic Collector-Base Voltage Collector-E mitter Voltage Emitter-Base Voltage Col lector Current Base Current Total Power Dissipation Junction Temperature Stora ge Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating 60 50 5 150 50 40 0 +150 -55 to +150 Unit V V V mA mA mW o o 3 2 1 .050 Typ (1.27) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Rat ings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) .
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