2N3737

2N3734 2N3735 CASE 79, STYLE 1 TO-39 (TO-205AD) 2N3736 2N3737 CASE 26, STYLE 1 TO-46 (TO-206AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3725 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/\ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3734 2N3735 Symbol 2N3736 2N3737 vCEO VCBO v EBO 30 50 50 75 5.0 'C 1.5 TO-39 TO-46 2N3734 2N3736 2N3735 2N3737 PD 1.0 0.5 5.71 2.86 Pd 4.0 2.0 22.8 11.4 TJ< Tstg -65 to + 200 Symbol R 0JC R 0JA 2N3734 2N3735 2N3736 2N3737 0.044 0.088 0.175 0.35 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C Unit °C/mW °C/mW ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) dC = 10 mAdc, Ib = 0) 2N3734, 2N3736 2N3735, 2N3737 Collector-Base Breakdown Voltage dC = 10 ^Adc, Ie = 0) 2N3734, 2N3736 2N3735, 2N3737 Emitter-Base Breakdown Voltage (Ig = 10/iAdc, lc = 0) Collector Cutoff Current (Vqe = 25 Vdc, V EB = 2 Vdc) (VC £ = 25 Vdc, VEB = 2 Vdc, TA = 100°C) (Vqe = 40 Vdc, V EB = 2 Vdc) (Vqe = 40 Vdc, Veb = 2 Vdc, TA = 100°C) Base Cutoff Current (Vqe = 25 Vdc, Veb = 2 Vdc) (Vce = 40 Vdc, V E b = 2 Vdc) ON CHARACTERISTICS 2N3734, 2N...