2SC2462
Silicon NPN Epitaxial
REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005
Application
Low frequency am...
2SC2462
Silicon
NPN Epitaxial
REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 50 40 5 100 –100 150 150 –55 to +150 Unit V V V mA mA mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 6
Free Datasheet http://www.datasheet4u.com/
2SC2462
Electrical Characteristics
(Ta = 25°C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Min 50 40 5 — — 100 — — Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA
Rev.2.00 Aug 10, 2005 page 2 of 6
Free Datasheet http://www.datasheet4u.com/
2SC2462
Main Characteris...