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2SC2462

Renesas

Silicon NPN Epitaxial Transistor

2SC2462 Silicon NPN Epitaxial REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005 Application Low frequency am...


Renesas

2SC2462

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Description
2SC2462 Silicon NPN Epitaxial REJ03G0697-0200 (Previous ADE-208-1063) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 50 40 5 100 –100 150 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 Free Datasheet http://www.datasheet4u.com/ 2SC2462 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2462 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Min 50 40 5 — — 100 — — Typ — — — — — — — — Max — — — 0.5 0.5 500 0.2 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA Rev.2.00 Aug 10, 2005 page 2 of 6 Free Datasheet http://www.datasheet4u.com/ 2SC2462 Main Characteris...




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