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2SC2463

Renesas

Silicon NPN Epitaxial Transistor

2SC2463 Silicon NPN Epitaxial REJ03G0698-0200 (Previous ADE-208-1064) Rev.2.00 Aug.10.2005 Application Low frequency am...


Renesas

2SC2463

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Description
2SC2463 Silicon NPN Epitaxial REJ03G0698-0200 (Previous ADE-208-1064) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 Free Datasheet http://www.datasheet4u.com/ 2SC2463 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2463 is grouped by hFE as follows. Grade D E Mark DD DE hFE 250 to 500 400 to 800 Min 55 50 5 — — 250 — — Typ — — — — — — — — Max — — — 0.5 0.5 800 0.5 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA Rev.2.00 Aug 10, 2005 page 2 of 6 Free Datasheet http://www.datasheet4u.com/ 2SC2463 Main Characteristics Maximum Collector Dissipation Curve T...




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