2N3740

2N3740 2N3740A 2N3741 2N3741A SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3741 2N3740A 2N3741A 60 80 60 80 7.0 4.0 10 2.0 25 -65 to +200 UNITS V V V A A A W °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740) ICEV ICEV ICEV VCE=40V, VBE=1.5V, TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO ICEO ICEO VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO IEBO IEBO VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N3741) VEB=7.0V (2N3740A, 2N3741A) BVCEO IC=100mA (2N3740, 2N3740A) 60 BVCEO IC=100mA (2N3741, 2N3741A) 80 VCE(SAT) IC=1.0A, IB=125mA VBE(ON) VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=100mA 40 hFE ...