2N3740 2N3740A 2N3741 2N3741A
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTR...
2N3740 2N3740A 2N3741 2N3741A
SILICON
PNP POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon
PNP power
transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature
SYMBOL
VCBO VCEO VEBO
IC ICM IB PD TJ, Tstg
2N3740
2N3741
2N3740A
2N3741A
60
80
60
80
7.0
4.0
10
2.0
25
-65 to +200
UNITS V V V A A A W °C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV ICEV
VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A)
ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740)
ICEV ICEV ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A)
ICBO
VCB=Rated VCBO (2N3740, 2N3741)
ICBO ICEO ICEO
VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A)
ICEO
VCE=60V (2N3741)
ICEO IEBO IEBO
VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N3741) VEB=7.0V (2N3740A, 2N3741A)
BVCEO IC=100mA (2N3740, 2N3740A)
60
BVCEO IC=100mA (2N3741, 2N3741A)
80
VCE(SAT) IC=1.0A, IB=125mA
VBE(ON) VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=100mA
40
hFE
...