2SC2881

SOT-89 Plastic-Encapsulate Transistors WILLAS 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” SOT-89 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z Power Amplifier and Voltage Amplifier Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation mi 500 250 150 -55~+150 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=120V,IE=0 VEB=5V,IC=0 VCE=5V, IC=100mA IC=500mA,IB=50mA VCE=5V, IC=0.5A VCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz Y 120–240 CY1 Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Pr eli O 80–160 CO1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Min 120 120 5 0.1 0.1 80 240 1 1 120 30 V V MHz pF Typ Max Unit V V V µA µA Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance CLASSIFICATION OF hFE RANK RANGE MARKING 2012-0 na 120 5 V V 800 mA mW ℃/W ℃ ℃ ry Value 120 Unit V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) WILLA...