2SC2982 Transistor Datasheet

2SC2982 Datasheet, PDF, Equivalent


Part Number

2SC2982

Description

Transistor

Manufacture

Kexin

Total Page 2 Pages
Datasheet
Download 2SC2982 Datasheet


2SC2982
SMD Type
Transistors
Medium Power Amplifier Applications
2SC2982
Features
Low Saturation Voltage
: VCE(sat) = 0.5V (max) (IC = 2A, IB = 50mA)
Small Flat Package
Complementary to 2SA1314
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulsed) *1
ICP
Base Current (DC)
IB
Base Current (Pulse) *1
IBP
Collector Power Dissipation
PC
PC *2
Jumction temperature
Tj
Storage temperature Range
Tstg
*1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max)
*2 Mounted on a ceramic substrate (250 mm2 x 0.8 t)
Rating
20
10
6
2
4
0.4
0.8
500
1000
150
-55 to +150
Unit
V
V
V
A
A
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
Testconditons
ICBO VCB = 30V , IE = 0
IEBO VEB = 6V , IC = 0
V(BR)CEO IC = 10mA , IB = 0
V(BR)EBO IE = 1mA , IC = 0
VCE = 1V , IC = 0.5A
hFE
VCE = 1V , IC = 2A
VCE(sat) IC = 2A , IB = 50mA
VBE VCE = 1V , IC = 2A
fT VCE = 1V , IC = 0.5A
Cob VCB = 10V , IE = 0 , f = 1MHz
Min Typ Max Unit
0.1 A
0.1 A
10 V
6V
140 600
70 140
0.2 0.5 V
0.86 1.5 V
150 MHz
27 pF
www.kexin.com.cn 1
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2SC2982
SMD Type
2SC2982
hFE Classification
Marking
Rank
hFE
A
140 240
S
B
200 330
C
300 450
D
420 600
Electrical Characteristics Curves
Transistors
2 www.kexin.com.cn
Free Datasheet http://www.datasheet4u.com/


Features SMD Type Medium Power Amplifier Applicat ions 2SC2982 Transistors Features Low Saturation Voltage : VCE(sat) = 0.5V ( max) (IC = 2A, IB = 50mA) Small Flat Pa ckage Complementary to 2SA1314 Absolut e Maximum Ratings Ta = 25 Parameter Col lector-Base Voltage Collector-Emitter V oltage Emitter-Base Voltage Collector C urrent (DC) Collector Current (Pulsed) *1 Base Current (DC) Base Current (Puls e) *1 Collector Power Dissipation Jumct ion temperature Storage temperature Ran ge Symbol VCBO VCEO VEBO IC ICP IB IBP PC PC *2 Tj Tstg Rating 20 10 6 2 4 0.4 0.8 500 1000 150 -55 to +150 Unit V V V A A A A mW *1 Pulse test: pulse widt h = 10ms (max), duty cycle = 30% (max) *2 Mounted on a ceramic substrate (250 mm2 x 0.8 t) Electrical Characteristic s Ta = 25 Parameter Collector Cut-off C urrent Emitter Cut-off Current Collecto r-Emitter Breakdown Voltage Emitter-Bas e Breakdown Voltage DC Current Gain Col lector-Emitter Saturation Voltage Base- Emitter Voltage Transition Frequency Collector Output Capacitan.
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