2SC2983 Transistor Datasheet

2SC2983 Datasheet, PDF, Equivalent


Part Number

2SC2983

Description

NPN Silicon Epitaxial Transistor

Manufacture

Kexin

Total Page 1 Pages
Datasheet
Download 2SC2983 Datasheet


2SC2983
SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC2983
Features
High Transiton Frequency: Ft=100MHz(TYP.)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Base Current
Total Power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
160
160
5
1.5
0.3
1
15
150
-55 to +150
Unit
V
V
V
A
A
W
W
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
VBE
fT
cob
Testconditons
VCB=160V,IE=0
VEB=5V,IC=0
IC=10mA,IB=0
IE=1mA,IC=0
VCE=5V,IC=100mA
IC=500mA,IB=50mA
VCE=5V,IC=500mA
VCE=10V,IC=100mA
VCB=10V.IE=0,f=1MHz
Min Typ Max Unit
1 ìA
1 ìA
160 V
5V
70 240
1.5 V
1V
100 MHz
25 pF
hFE Classification
Marking
O
hFE 70 to 140
Y
120 to 240
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Features SMD Type NPN Silicon Epitaxial Transisto r 2SC2983 TO-252 +0.15 1.50 -0.15 Tran sistors Unit: mm 2.30 +0.8 0.50-0.7 +0 .1 -0.1 Features High Transiton Freque ncy: Ft=100MHz(TYP.) +0.2 9.70 -0.2 6. 50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.8 0-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Ab solute Maximum Ratings Ta = 25 Paramete r Collector to base voltage Collector t o emitter voltage Emitter to base volta ge Collector current Base Current Total Power dissipation Ta = 25 TC = 25 Junc tion temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Ra ting 160 160 5 1.5 0.3 1 15 150 -55 to +150 Unit V V V A A W W Electrical Cha racteristics Ta = 25 Parameter collecto r cutoff current emitter cutoff current Collector-Emitter Breakdown Voltage Em itter-Base Breakdown Voltage DC current Gain Collector-Emitter Saturation Volt age Base- Emitter Voltage Transition Frequency Collector Output.
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