2SC2996

SMD Type Transistors NPN Transistors 2SC2996 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=30V +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IE PC TJ Tstg Rating 40 30 4 50 -50 150 125 -55 to 125 Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector-base time constant Noise figure Power gain Oscillation output voltage Common emitter reverse transfer capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 40 V , IE= 0 IEBO VEB=4V , IC=0 VCE(sat) IC=50mA, IB=5mA VBE(sat) IC=50mA, IB=5mA hFE VCE=6V, IC=1mA CC rbb' VCE= 6 V, IE=-1mA,f=30MHz NF VCE= 6V,IE=-1mA,f=100MHz PG VOSC VCE= 6V, f=100MHz Cre VCE= 6V,f=1MHz fT VCE= 6 V, IE= -1mA ■ Classification of hfe Type Range Marking 2SC2996-R 40-80 GR 2SC2996-O 70-140 GO 2SC...