2SC3052

2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR Dim A Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 1.BASE 2.EMITTER 3 B C B S 2 FEATURES n Top View 1 D G H J K L S V Excellent linearity of DC forward current gain RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) V G n n C D H K J All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 50 50 6 0.2 150 o Units V V V A mW o 125, -55~125 C ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified ) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Test conditions Ic=100 µ A, IE=0 Ic= 100µ A, IB=0 IE= 100µ A, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA I C = 100mA, IB = 10mA I C = 100mA, IB ...