2SC3072

SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High DC current gain. Low collector saturation voltage. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 50 20 8 5 8 0.5 1.0 10 150 -55 to +150 Unit V V V A A A W W * Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO Testconditons VCB = 20 V, IE = 0 VEB = 8 V, IC = 0 20 140 70 1.0 1.5 100 40 V V MHz pF 450 Min Typ Max 100 100 Unit nA nA V V(BR)CEO IC = 10 mA, IB = 0 hFE VCE = 2 V, IC = 0.5A VCE = 2 V, IC = 4A VCE (sat) IC = 4 A, IB = 0.1 A VBE fT Cob VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE A 140 240 C3072 B 200 330 C 300...