SMD Type
Silicon NPN Epitaxial 2SC3120
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Feature...
SMD Type
Silicon
NPN Epitaxial 2SC3120
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Features
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse Transfer Capacitance Transition Frequency Conversion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 30V, IE = 0 VEB = 2V, IC = 0 15 40 100 0.6 1500 12 2400 17 8 200 0.9 pF MHz dB dB Min Typ Max 0.1 1.0 Unit ìA ìA V
V(BR)CEO IC=1mA,IB=0 hFE Cre fT Gce NF VCE = 10 V, IC = 5 mA VCB=10V, IE=0, f=1MHz VCE = 10 V, IC = 2mA VCE = 10 V, IC = 2mA,f=800MHz FL=830MHz
Marking
Marking HB
+0.1 0.38-0.1
0-0.1
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