2SC3122

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3122 DESCRIPTION ·High Gain: Gpe= 24dB TYP. @ f= 200MHz ·Low Noise: NF= 2.0dB TYP. @ f= 200MHz APPLICATIONS ·Designed for TV VHF RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 20 mA IB B Base Current-Continuous 10 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3122 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 30 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 2mA ; VCE= 10V 60 300 Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.3 0.45 pF fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 10V 400 650 MHz Gpe Power Gain VCE= 12V; VAGC= 1.4V;f= 200MHz 20 24 28 dB NF Noise Figure 2.0 3.2 dB isc Website：www.iscsemi.cn 2 Free Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc RF Product Specif...