SMD Type
Silicon NPN Epitaxial 2SC3124
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
+0.1 1....
SMD Type
Silicon
NPN Epitaxial 2SC3124
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition Frequency Collector Output Capacitance Collector-BaseTime Constant Symbol ICBO IEBO Testconditons VCB = 15V, IE = 0 VEB = 3V, IC = 0 15 40 650 100 1100 0.9 7 1.3 12 200 MHz pF ps Min Typ Max 0.1 1.0 Unit ìA ìA V
V(BR)CEO IC=1mA,IB=0 hFE fT Cob Cc.rbb2 VCE = 3 V, IC = 8mA VCE = 10 V, IC = 8mA VCC=10V,IE=0,f=1MHz VCB=10V,IC=8mA,f=30MHz
Marking
Marking HF
+0.1 0.38-0.1
0-0.1
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