2SC3322

2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IB PC* Tj Tstg 1 Ratings 900 800 7 5 10 2.5 80 150 –55 to +150 Unit V V V A A A W °C °C Free Datasheet http://www.datasheet4u.com/ 2SC3322 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ — — Max — — Unit V V Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 4 A, IB1 = 1.5 A, IB2 = –0.8 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.5 A* VCE = 5 V, IC = 3 A* V V µs µs µs IC = 3 A, IB1 = 0.6 A, IB2 = –1.5 A, VCC ≅ 250 V 1 1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf 7 — — 15 7 — — — — — — — — — — — — — — — — 100 100 — — 1.0 1.5 1.0 3.0 1.0 V µA µA DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test IC = 1.5 A, IB = 0.3 A* 1 2 Free Datasheet http://www.datasheet4u.com/ 2SC3322 M...