2SC3356

Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Low Noise Amplifier at VHF, UHF and CATV band  Low Noise and High Gain  High Power Gain Collector  SOT-23 A L 3 Top View CB 12 KE 1 3 2  Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) F REF. A B C D E F PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATINGS 20 12 3 0.1 0.25 +150, -55 ~ +150 D G H Millimeter Min. 2.80 2.25 1.20 Max. 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. UNIT V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector-Base Breakdown Voltage V(BR)CBO 20 - - V IC=10μA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 12 - - V IC= 1mA, IB=0 Collector Cut-Off Current ICBO - - 1 μA VCB=10V, IE=0 Emitter Cut-Off Current IEBO - - 1 μA VEB= 1V, IC=0 DC Current Gain hFE* 50 - 250 VCE= 10V, IC=20mA Transition Frequency fT - 7 - GHz VCE=10V, IC= 20mA, Noise Figure NF - - 2 dB VCE=10V, IC= 7mA, f = 1GHz *Pulse Test: Pulse Width 350μs, Duty Cycle 2% CLASSIFICATION OF hFE MARKING RANK RANGE R2...