Data Sheet No. 2N3762L
Type 2N3762L
Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV
Features: • • • • General-purpo...
Data Sheet No. 2N3762L
Type 2N3762L
Geometry 6706 Polarity
PNP Qual Level: JAN - JANTXV
Features: General-purpose
transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases.
Generic Part Number: 2N3762L
REF: MIL-PRF-19500/396
TO-5
Maximum Ratings
TC = 25 C unless otherwise specified
o
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC TJ TSTG
Rating
40 40 5.0 1.5 -55 to +200 -55 to +200
Unit
V V V mA
o
C C
o
Data Sheet No. 2N3762L
Electrical Characteristics
TC = 25oC unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V, TA = 150oC Collector-Base Cutoff Current VCB = 20 V Emitter-Base Cutoff Current VEB = 2.0 V
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICBO1 IEBO
Min
40 40 5.0 ---------
Max
------100 150 100 200
Unit
V V V nA µA nA nA
ON Characteristics
Forward current Transfer Ratio IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 1.5 V (pulse test) IC ...