isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3449
DESCRIPTION ·Low Collector Saturation Voltage ·High br...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC3449
DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage and high reliability ·Fast switching speed ·Wide ASO ·
NPN triple diffused planar silicon
transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC3449
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.6A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE=...