2SC3512

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 ICBO Collector Cutoff Current VCB= 12V; IE= 0 ICEO Collector Cutoff Current VCE= 10V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz PG Power Gain IC= 20mA; VCE= 5V; f= 900MHz NF Noise Figure IC= 5mA ; VCE= 5V; f= 900MHz MIN TYP. MAX UNIT 15 V 1.0 μA 1.0 μA 1.0 μA 50 250 6.0 GHz 1.2 1.6 pF 10.5 dB 1.6 dB NOTICE： ISC reserves...