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2N3766 Dataheets PDF



Part Number 2N3766
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN POWER SILICON TRANSISTOR
Datasheet 2N3766 Datasheet2N3766 Datasheet (PDF)

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 80 6.0 2.0 4.0 25 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 7.0 C THERMAL CHARACTERISTI.

  2N3766   2N3766


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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N3766 60 80 6.0 2.0 4.0 25 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 7.0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W TO-66* (TO-213AA) *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 80 Vdc VCB = 100 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 V(BR)CEO 60 80 500 500 10 10 10 10 500 Vdc ICEO µAdc ICEX µAdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 5.0 Vdc IC = 500 mAdc, VCE = 5.0 Vdc IC = 1.0 Adc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 0.5 Adc, IB = 0.05 Adc Base-Emitter Voltage IC = 1.0 Adc, VCE = 10 Vdc hFE 30 40 20 160 VCE(sat) VBE(on) 2.5 1.0 1.5 Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe Cobo 1.0 8.0 50 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc Turn-Off Time VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc t on 0.25 2.5 µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 6.25 Vdc, IC = 4.0 Adc Test 2 VCE = 20 Vdc, IC = 1.25 Adc Test 3 VCE = 50 Vdc, IC = 150 mAdc 2N3766 VCE = 65 Vdc, IC = 150 mAdc 2N3767 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


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