TIGER ELECTRONIC CO.,LTD
Silicon NPN Triple Diffused Planar Transistor
Product specification
2SC3834
DESCRIPTION It i...
TIGER ELECTRONIC CO.,LTD
Silicon
NPN Triple Diffused Planar
Transistor
Product specification
2SC3834
DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
O
Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg
Value 200 120 8.0 7.0 3.0 50 150 -55~150
Unit V V V A A W
o o
C C
Storage Temperature
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=200V, IE=0 VEB=8V, IC=0 IC=50mA, IB=0 VCE=4V, IC=0.3A VCE=4V, IC=3.0A 120 100 70 220 0.5 1.2 10 V V MHz Min. Typ. Max. 0.1 0.1 Unit mA mA V
ICBO IEBO VCEO hFE(1) hFE(2)
VCE(sat) IC=3.0A,IB=300mA VBE(sat) IC=3.0A,IB=300mA fT
VCE=12V,IC=500mA
Free Datasheet http://www.datasheet4u.com/
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