2N3771, 2N3772
High Power NPN Silicon Power Transistors
These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features
Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772
These Devices are Pb−Free and are RoHS Compliant
MAX...
