2N3771

2N3771 ® 2N3772 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO VCEV VCBO VEBO IC ICM IB IBM Ptot Tstg Collector-Emitter Voltage (IE = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-Base Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature December 2000 Value 2N3771 2N3772 40 60 50 80 50 100 57 30 20 30 30 7.5 5 15 15 150 -65 to 200 Unit V V V V A A A A W oC 1/4 2N3771/2N3772 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.17 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEV Collector Cut-off for 2N3771 VCB = 50 V Current (VBE = -1.5V) for 2N3772 VCB = 100 V for all VCB = 30 V Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) for 2N3771 VCB = 30 V for 2N3772 VCB = 50 V ICBO Collector Cut-off Current (IE = 0) for 2N3771 VCB = 50 V for 2N3772 VCB = 100 V IEBO Emitter Cut-off Current for 2N3771 VCB = 5 V (IC = 0) for 2N3772 VCB = 7 V VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 0.2 A for 2N3771 for 2N3772 VCEV(sus)∗...