2SC3930
Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product A suffix o...
2SC3930
Elektronische Bauelemente 0.03A , 30V
NPN Silicon Epitaxial Planar
Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
●
SOT-323
A
3 3
● ●
For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT
1
L
Top View
2
C B
1 2
K
E D
CLASSIFICATION OF hFE
Product-Rank Range 2SC3930-VB 70~140 2SC3930-VC 110~220
F
G
H
J
REF. A B C D E F
PACKAGE INFORMATION
Package SOT-323 MPQ 3K LeaderSize 7’ inch
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40
REF. G H J K L
Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP.
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
30 20 5 30 150 150, -55~150
Unit
V V V mA mW ℃
ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Common emitter capacitance Noise Figure Reverse transfer impedance
http://www.SeCoSGmbH.com/
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT
Min.
30 20 5 70 150 -
T...