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2SC3930

SeCoS

NPN Silicon Transistor

2SC3930 Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix o...


SeCoS

2SC3930

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2SC3930 Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● SOT-323 A 3 3 ● ● For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1 L Top View 2 C B 1 2 K E D CLASSIFICATION OF hFE Product-Rank Range 2SC3930-VB 70~140 2SC3930-VC 110~220 F G H J REF. A B C D E F PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current – Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 30 20 5 30 150 150, -55~150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS ( TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Common emitter capacitance Noise Figure Reverse transfer impedance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT Min. 30 20 5 70 150 - T...




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