2SC4097W

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4097W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4097W Marking CP/CQ/CR Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 32 5 500 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF003 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=10mA ICE=100mA,IB=10mA VCE=5V, IC= 20mA,f=100MHz VCB=10V,IE=0,f=1MHz Production specification 2SC4097W MIN TYP MAX UNIT 40 32 5 1 1 82 390 0.4 250 6 V GHz pF V V V μA μA CLASSIFICATION Rank Range Marking OF hFE P 82-180 CP Q 120-270 CQ ...