2SC4102W

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z Excellent hFE linearity. Power dissipation:PCM=200mW Production specification 2SC4102W Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC4102W Marking CP/CQ/CR Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 120 120 5 50 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF037 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=50μA,IE=0 IC=1mA,IB=0 IE=50μA,IC=0 VCB=100V,IE=0 VEB=4V,IC=0 VCE=6V,IC=2mA ICE=10mA,IB=1mA VCE=12V, IC= 2mA,f=100MHz VCB=12V,IE=0,f=1MHz Production specification 2SC4102W MIN TYP MAX UNIT 120 120 5 0.5 0.5 180 560 0.5 140 2.5 V MHz pF V V V μA μA CLASSIFICATION Rank Range Marking OF hFE R 180-390 TR S 270-...