Document
SMD Type
High-Voltage Switching Applications 2SC4134
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage and large current capacity. Fast switching speed.
+0.2 9.70 -0.2
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Collector dissipation Jumction temperature Storage temperature Tc=25 Symbol VCBO VCEO VEBO IC ICP PC PC Tj Tstg Rating -120 -100 -6 -1 -2 0.8 10 150 -55 to +150 Unit V V V A A W W
3 .8 0
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SMD Type
2SC4134
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 100V, IE=0 VEB = 4V, IC=0 VCE =5V , IC = 100mA VCE = 10V , IC = 100mA VCB = 10V , f = 1.0MHz
Transistors
Min
Typ
Max 100 100
Unit nA nA
100 120 8.5 0.1 0.85 120 100 6 80
400 MHz pF 0.4 1.2 V V V V V ns
VCE(sat) IC = 400mA , IB = 40mA VBE(sat) IC = 400mA , IB = 40mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton
Storage time
tstg
850
ns
Fall time
tf
50
ns
hFE Classification
Rank hFE R 100 200 S 140 280 T 200 400
2
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