SMD Type
NPN Silicon Epitaxial Transistor 2SC4180
Features
Small dimension High DC current gain
Transistors
1 Emitter ...
SMD Type
NPN Silicon Epitaxial
Transistor 2SC4180
Features
Small dimension High DC current gain
Transistors
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 120V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1mA* VCE = 6V , IC = 0.1mA VCE(sat) IC = 10mA , IB = 1mA VBE fT Cob VCE =6V , IC = 1mA VCE = 6V , IE = -1mA VCB = 30V , IE = 0 , f = 1.0MHz 0.55 50 135 100 600 580 0.07 0.59 110 1.6 2.5 0.3 0.65 V V MHz pF Min Typ Max 0.05 0.05 900 Unit ìA ìA
hFE Classification
Marking hFE D15 135 270 D16 200 400 D17 300 600 D18 450 900
www.kexin.com.cn
1
Free Datasheet http://www.datasheet4u.com/
...