2SC4332-Z

SMD Type NPN Silicon Epitaxia 2SC4332-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Base current Total power dissipation Junction temperature Storage temperature * PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Rating 100 60 7 5 10 2.5 1 150 -55 to +150 Unit V V V A A A W 3 .8 0 High DC current gain. www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SC4332-Z Electrical Characteristics Ta = 25 Parameter Collector to Emitter Voltage Collector to Emitter Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain DC Current Gain Collector Saturation Voltage Collector Saturation Voltage Base Saturation Voltage Base Saturation Voltage Collector Capacitance Gain Bandwidth Product Turn-on Time Storage Time Fall Time Symbol VCEO(SUS) VCEX(SUS) ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Cob fT ton tstg tf Testconditons IC = 3.0 A, IB...