2SC4529

2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol Rating Unit VCBO VCEO VEBO IC iC(peak) PC PC*1 Junction temperature Storage temperature Tj Tstg 30 20 3 300 500 1 5 150 °C V V V mA TO-126 MOD ————————————————————– ————————————————————– ————————————————————– ————————————————————– ————————————————————– mA W 1 2 3 1. Emitter 2. Collector 3. Base ————————————————————– ——–———– ————————————————————– ————————————————————– –55 to °C +150 ————————————————————– Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff Current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Min Typ — — — — — — 2.2 4.7 Max — — 1.0 10 200 1.0 — — V GHz pF Unit V V µA µA Test condition IC = 100 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA IC = 100 mA, IB = 10 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz ——————————————————————————————————————————— V(BR)CBO 30 V(BR)CEO 20 ICBO IEBO hFE VCE(sat) fT Cob — — 50 — 1.5 — ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ...