2SC4600

SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4600 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Surface mount type device making the following possible. Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment. High breakdown voltage, high reliability. Fast switching speed. Wide ASO. Adoption of MBIT process. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 5.08 +0.1 -0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 High density surface mount applications. + 0 .2 8 .7 -0 .2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) * Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range * PW 300ms, duty cycle 10% Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 800 500 7 5 10 2 1.65 50 150 -55 to +150 A W Unit V V V A 5 .6 0 for 2SC4600-applied equipment. 1,Base 2,Collector 3,Emitter www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SC4600 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage C...