2SC4702

2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “XV–”. Preliminary Datasheet R07DS0275EJ0500 Rev.5.00 Jan 10, 2014 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 –55 to +150 (Ta = 25°C) Unit V V V mA mW °C °C R07DS0275EJ0500 Rev.5.00 Jan 10, 2014 Page 1 of 6 2SC4702 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 300 — — V IC = 10 μA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 300 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 μA, IC = 0 Collector cutoff current ICBO — — 0.1 μA VCB = 250 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — — 0.5 V IC = 30 mA, IB = 3 mA DC current transfer ratio hFE 60 — 150 VCE = 6 V, IC = 2 mA Gain bandwidth product fT — 80 — MHz VCE = 6 V, IC = 5 mA Collector output capacitance Cob — 1.5 — pF VCB = 10 V, IE = 0, f = 1 MHz R07DS0275EJ0500 Rev.5.00 Jan 10, 2014 Page 2 of 6 Collector Power Dissipation PC (mW) 2SC4...