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MGA-43228 Dataheets PDF



Part Number MGA-43228
Manufacturers AVAGO
Logo AVAGO
Description 2.3 - 2.5 GHz 29dBm High Linearity Wireless Data Power Amplifier
Datasheet MGA-43228 DatasheetMGA-43228 Datasheet (PDF)

MGA-43228 (2.3–2.5) GHz 29dBm High Linearity Wireless Data Power Amplifier Data Sheet Description Avago Technologies’ MGA-43228 is a power amplifier for use in the (2.3-2.5)GHz band. High linear output power at 5V is achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 5.0mm x 5.0mm x 0.85mm 28-lead QFN package. It also includes shutdown and switchable gain functions. A detector is also included on-chip. The compact.

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MGA-43228 (2.3–2.5) GHz 29dBm High Linearity Wireless Data Power Amplifier Data Sheet Description Avago Technologies’ MGA-43228 is a power amplifier for use in the (2.3-2.5)GHz band. High linear output power at 5V is achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 5.0mm x 5.0mm x 0.85mm 28-lead QFN package. It also includes shutdown and switchable gain functions. A detector is also included on-chip. The compact footprint coupled with high gain and high efficiency make the MGA-43228 an ideal choice as a power amplifier for IEEE 802.16 (WiMAX) and WLL applications. Features  High gain: 38.5dB  High linearity performance: 29.2dBm at 5V supply (2.5% EVM, 64-QAM ¾ FEC rate OFDMA, 10MHz bandwidth)  High efficiency: 16.1%  Built-in detector and shutdown switches  Switchable gain: 23.6dB attenuation using one single CMOS compatible switch pin  ETSI spectral mask compliant at 29dBm output power  GaAs E-pHEMT Technology[1]  Low cost small package size: 5.0 x 5.0 x 0.85 mm3  MSL-2a and lead-free  Usable at 3.3V supply for lower supply voltage applications Component Image 5.0 x 5.0 x 0.85 mm3 28-lead QFN Package (Top View) Vdd1 Gnd Vdd2 Vdd3 Vdd3 Vdd3 Specifications 43228 YYWW XXXX RFin Gnd RFout RFout RFout 2.4GHz; Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Iqtotal = 500mA (typ), IEEE 802.16e 64-QAM OFDMA, ¾ FEC rate  38.5 dB Gain  29.2 dBm Linear Pout (2.5% EVM)  16.1% PAE @ Linear Pout  2.6V Vdet @ Linear Pout  23.6 dB Switchable Gain Attenuation  25A Shutdown Current Vbyp Vbias Vdet Vc1 Vc2 Vc3 Notes: Package marking provides orientation and identification ”43228” = Device part number ”YYWW” = Year and work week ”XXXX” = Assembly lot number Functional Block Diagram Vdd1 Vdd2 Vdd3 Applications  High linearity amplifier for IEEE 802.16 fixed terminal amplifier  WLL amplifier RFout Note: 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. RFin Gain switch and bias circuitry Vbyp Vc1 Vc2 Vc3 Vbias Vdet Free Datasheet http://www.datasheet4u.com/ Absolute Maximum Rating[1] TA=25°C Symbol Vdd, Vbias Vc Pin,max Pdiss Tj,MAX TSTG Thermal Resistance Units V V dBm W °C °C Parameter Supply voltages, bias supply voltage Control Voltage CW RF Input Power Total Power Dissipation [3] Junction Temperature Storage Temperature Absolute Max. 6.0 (Vdd) 20 8.0 150 -65 to 150 Thermal Resistance [2] jc = 11.7°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using InfraRed Measurement Technique. 3. Board temperature (Tc) is 25°C, for Tc >56.4°C derate the device power at 85.5mW per °C rise in board temperature adjacent to package bottom. Electrical Specifications TA = 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, Iqtotal = 500mA, RF performance at 2.4 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless otherwise stated. Symbol Vdd Iqtotal Gain OP1dB Pout_5V Itotal_5V S11 S22 S12 Atten Vdet DetR NF S Parameter and Test Condition Supply Voltage Quiescent Supply Current (normal high gain mode) Quiescent Supply Current (low gain mode, Vbyp = 5.0V) Gain Output Power at 1dB Gain Compression Linear Output Power @ 2.5% EVM with 64-QAM OFDMA modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC Total current draw at Pout_5V level Input Return Loss, 50 source Output Return Loss, 50 source Reverse Isolation Gain attenuation in low gain mode Detector output DC voltage @ 29dBm linear Pout Detector RF dynamic range Noise figure Stability under load VSWR of 6:1 (all phase angle), spurious output Units V mA mA dB dBm dBm mA dB dB dB dB V dB dB dBc Min. Typ. 5.0 500 500 Max. 35.0 27.7 38.5 35.5 29.2 1023 -10 -11 60 1250 20.5 23.6 2.6 20 2.1 26.5 -60 2 Free Datasheet http://www.datasheet4u.com/ Product Consistency Distribution Charts[1] LSL CPK = 2.643, Std Dev = 0.18 CPK = 2.008, Std Dev = 0.038 USL 28 29 30 0.8 0.9 1 1.1 1.2 Figure 1. Pout_5V; LSL = 27.7dBm, Nominal = 29.2dBm Figure 2. Itotal_5V; Nominal = 1.023A, USL = 1.250A LSL CPK = 1.781, Std Dev = 0.653 LSL CPK = 1.493, Std Dev = 0.639 USL 34 35 36 37 38 39 40 41 42 20 21 22 23 24 25 26 27 Figure 3. Gain; LSL = 35.0dB, Nominal = 38.5dB Figure 4. Atten; LSL = 20.5dB, Nominal = 23.6dB, USL = 26.5dB; Vbyp = 5V Note: 1. Distribution data sample size is 2000 samples taken from 3 different wafer lots. TA = 25°C, Vdd = Vbias = 5V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, RF performance at 2.4GHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 3 Free Datasheet http://www.d.


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