Document
MGA-43228
(2.3–2.5) GHz 29dBm High Linearity Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43228 is a power amplifier for use in the (2.3-2.5)GHz band. High linear output power at 5V is achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 5.0mm x 5.0mm x 0.85mm 28-lead QFN package. It also includes shutdown and switchable gain functions. A detector is also included on-chip. The compact footprint coupled with high gain and high efficiency make the MGA-43228 an ideal choice as a power amplifier for IEEE 802.16 (WiMAX) and WLL applications.
Features
High gain: 38.5dB High linearity performance: 29.2dBm at 5V supply (2.5% EVM, 64-QAM ¾ FEC rate OFDMA, 10MHz bandwidth) High efficiency: 16.1% Built-in detector and shutdown switches Switchable gain: 23.6dB attenuation using one single CMOS compatible switch pin ETSI spectral mask compliant at 29dBm output power GaAs E-pHEMT Technology[1] Low cost small package size: 5.0 x 5.0 x 0.85 mm3 MSL-2a and lead-free Usable at 3.3V supply for lower supply voltage applications
Component Image
5.0 x 5.0 x 0.85 mm3 28-lead QFN Package (Top View)
Vdd1 Gnd Vdd2 Vdd3 Vdd3 Vdd3
Specifications 43228 YYWW XXXX
RFin
Gnd
RFout RFout RFout
2.4GHz; Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Iqtotal = 500mA (typ), IEEE 802.16e 64-QAM OFDMA, ¾ FEC rate 38.5 dB Gain 29.2 dBm Linear Pout (2.5% EVM) 16.1% PAE @ Linear Pout 2.6V Vdet @ Linear Pout 23.6 dB Switchable Gain Attenuation 25A Shutdown Current
Vbyp Vbias Vdet Vc1 Vc2 Vc3
Notes: Package marking provides orientation and identification ”43228” = Device part number ”YYWW” = Year and work week ”XXXX” = Assembly lot number
Functional Block Diagram
Vdd1 Vdd2 Vdd3
Applications
High linearity amplifier for IEEE 802.16 fixed terminal amplifier WLL amplifier
RFout
Note: 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices.
RFin
Gain switch and bias circuitry Vbyp Vc1 Vc2 Vc3 Vbias Vdet
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Absolute Maximum Rating[1] TA=25°C
Symbol
Vdd, Vbias Vc Pin,max Pdiss Tj,MAX TSTG
Thermal Resistance
Units
V V dBm W °C °C
Parameter
Supply voltages, bias supply voltage Control Voltage CW RF Input Power Total Power Dissipation [3] Junction Temperature Storage Temperature
Absolute Max.
6.0 (Vdd) 20 8.0 150 -65 to 150
Thermal Resistance [2] jc = 11.7°C/W
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using InfraRed Measurement Technique. 3. Board temperature (Tc) is 25°C, for Tc >56.4°C derate the device power at 85.5mW per °C rise in board temperature adjacent to package bottom.
Electrical Specifications
TA = 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, Iqtotal = 500mA, RF performance at 2.4 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless otherwise stated. Symbol
Vdd Iqtotal Gain OP1dB Pout_5V Itotal_5V S11 S22 S12 Atten Vdet DetR NF S
Parameter and Test Condition
Supply Voltage Quiescent Supply Current (normal high gain mode) Quiescent Supply Current (low gain mode, Vbyp = 5.0V) Gain Output Power at 1dB Gain Compression Linear Output Power @ 2.5% EVM with 64-QAM OFDMA modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC Total current draw at Pout_5V level Input Return Loss, 50 source Output Return Loss, 50 source Reverse Isolation Gain attenuation in low gain mode Detector output DC voltage @ 29dBm linear Pout Detector RF dynamic range Noise figure Stability under load VSWR of 6:1 (all phase angle), spurious output
Units
V mA mA dB dBm dBm mA dB dB dB dB V dB dB dBc
Min.
Typ.
5.0 500 500
Max.
35.0 27.7
38.5 35.5 29.2 1023 -10 -11 60 1250
20.5
23.6 2.6 20 2.1
26.5
-60
2
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Product Consistency Distribution Charts[1]
LSL CPK = 2.643, Std Dev = 0.18 CPK = 2.008, Std Dev = 0.038 USL
28
29
30
0.8
0.9
1
1.1
1.2
Figure 1. Pout_5V; LSL = 27.7dBm, Nominal = 29.2dBm
Figure 2. Itotal_5V; Nominal = 1.023A, USL = 1.250A
LSL
CPK = 1.781, Std Dev = 0.653
LSL CPK = 1.493, Std Dev = 0.639
USL
34
35
36
37
38
39
40
41
42
20
21
22
23
24
25
26
27
Figure 3. Gain; LSL = 35.0dB, Nominal = 38.5dB
Figure 4. Atten; LSL = 20.5dB, Nominal = 23.6dB, USL = 26.5dB; Vbyp = 5V
Note: 1. Distribution data sample size is 2000 samples taken from 3 different wafer lots. TA = 25°C, Vdd = Vbias = 5V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, RF performance at 2.4GHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits.
3
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