60V N-Channel MOSFET
AON6246
60V N-Channel MOSFET
General Description
The AON6246 uses trench MOSFET technology that is uniquely optimized t...
Description
AON6246
60V N-Channel MOSFET
General Description
The AON6246 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 60V 80A < 6.4mΩ < 8mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
D
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current
C
Maximum 60 ±20 80 51 170 13 10 50 125 83 33 2.3 1.4 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A mJ W W ° C
Avalanche energy L=0.1mH C TC=25° C Power Dissipation Power Dissipation
B
TC=100° C TA=25° C TA=70° C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1.1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev 0: July 2011
www.aosmd.com...
Similar Datasheet