N-Channel MOSFET
AON6290
100V N-Channel MOSFET
General Description
The AON6290 uses trench MOSFET technology that is uniquely optimized ...
Description
AON6290
100V N-Channel MOSFET
General Description
The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100% UIS Tested 100% Rg Tested
100V 85A < 4.6mW < 6.2mW
Top View
DFN5X6 Bottom View
PIN1
Top View
S1 S2 S3 G4
8D 7D 6D 5D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 85 67 260 28 23 60 180 208 83 7.3 4.7
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 14 40 0.46
Max 17 55 0.6
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev.3.0: March 2014
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