N-Channel MOSFET
AON6403
30V P-Channel MOSFET
General Description
The AON6403 combines advanced trench MOSFET technology with a low resi...
Description
AON6403
30V P-Channel MOSFET
General Description
The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1mΩ < 4.3mΩ
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
D Top View
8 7 6 5
G S
PIN1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation
B C
Maximum -30 ±20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150
Units V V A
VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W ° C
C TC=100° TA=25° C TA=70° C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev 2: November 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AON6403
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID...
Similar Datasheet